Transfer of thin silicon layers by MeV hydrogen implantation

Author:

Assaf H.,Ntsoenzok E.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. High-Rate Epitaxial Growth of Silicon Using Electron Beam Evaporation at High Temperatures;Coatings;2023-11-30

2. Freestanding ultrathin single-crystalline SiC substrate by MeV H ion-slicing;Applied Physics Letters;2018-05-07

3. Defects induced by MeV H+ implantation for exfoliating of free-standing GaN film;Applied Physics A;2018-01-11

4. Defect formation in MeV H + implanted GaN and 4H-SiC investigated by cross-sectional Raman spectroscopy;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2017-09

5. Silicon exfoliation by hydrogen implantation: Actual nature of precursor defects;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2017-06

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