Implant isolation of InP by nitrogen irradiation: Effect of dose, initial carrier concentration and implantation temperature-Reference-Cited by-同舟云学术

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Implant isolation of InP by nitrogen irradiation: Effect of dose, initial carrier concentration and implantation temperature

Published:2005-10 Issue:1-2 Volume:240 Page:178-182
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Too P.,Ahmed S.,Gwilliam R.,Sealy B.J.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference12 articles.

1. Ion implantation for isolation of III-V semiconductors

2. MeV In-ion implantation for electrical isolation of p+-InP

3. Use of MeV O+ion implantation for isolation of GaAs/AlGaAs heterojunction bipolar transistors

4. S. Ahmed, P. Too, B.J. Sealy, R. Gwilliam, in: IEEE Proceedings of the 14th International Conference on Indium Phosphide and Related Materials (2002), p. 225.

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