Modeling charge collection efficiency degradation in partially depleted GaAs photodiodes using the 1- and 2-carrier Hecht equations-Reference-Cited by-同舟云学术

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Modeling charge collection efficiency degradation in partially depleted GaAs photodiodes using the 1- and 2-carrier Hecht equations

Published:2017-05 Issue: Volume:399 Page:12-19
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Auden E.C.,Vizkelethy G.,Serkland D.K.,Bossert D.J.,Doyle B.L.

Funder

Laboratory Directed Research and Development program at Sandia National Laboratories

Sandia Corporation

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference17 articles.

1. Review of displacement damage effects in silicon devices;Srour;IEEE Trans. Nucl. Sci.,2003

2. Effects of radiation damage in silicon p-i-n photodiodes;McPherson;Semicond. Sci. Technol.,1997

3. Zum Mechanismus des lichtelektrischen primarstromes in isolierenden Kristallen;Hecht;Eur. Phys. J. A,1932

4. The concept of generation and recombination lifetimes in semiconductors;Schroder;IEEE Trans. Electron Dev.,1982

5. A general expression for electrostatic induction and its application to semiconductor devices;Gunn;Solid-State Electron.,1964

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