Cross-section transmission electron microscopy of the ion implantation damage in annealed diamond
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference7 articles.
1. A determination of the critical damage density required for “amorphisation” of ion-implanted diamond
2. Activation of boron-dopant atoms in ion-implanted diamonds
3. Ion-implantation in diamond and diamond films: doping, damage effects and their applications
4. Cross-sectional transmission electron microscopy method and studies of implant damage in single crystal diamond
5. M. Rebak, private communication.
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1. Anomalous behaviour of surface Brillouin scattering in thin strained CVD diamond;Diamond and Related Materials;2020-11
2. Effects of high-power laser irradiation on sub-superficial graphitic layers in single-crystal diamond;Acta Materialia;2016-01
3. Electron microscopy profiling of ion implantation damage in diamond: Dependence on fluence and annealing;Diamond and Related Materials;2014-10
4. References;Nanobeam X-Ray Scattering;2013-10-18
5. Comparison of the crystalline quality of homoepitaxially grown CVD diamond layer on cleaved and polished substrates;physica status solidi (a);2010-08-30
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