Author:
Dahiwale S.S.,Shinde N.S.,Kanjilal D.,Bhoraskar V.N.,Dhole S.D.
Subject
Instrumentation,Nuclear and High Energy Physics
Reference24 articles.
1. Review of displacement damage effects in silicon devices
2. A.H. Johnston, in: Fourth International Workshop on Radiation Effect on Semiconductor Devices for Space Application, Tsukuba, Japan, October 11–13, 2000.
3. The response of n-channel EPROMs to radiation and annealing
4. Radioactive Reliability of Programmable Memories
5. The Effects of Radiation on Electronic Systems;Messenger,1991
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