Effects of 0.28–2.80MeV proton irradiation on GaInP/GaAs/Ge triple-junction solar cells for space use

Author:

Rong Wang,Yunhong Liu,Xufang Sun

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference10 articles.

1. Multi-junction solar cells and novel structures for solar cell applications;Yamaguchi;Physica E,2002

2. 5–20MeV proton irradiation effects on GaAs/Ge solar cells for space use;Rong;Sol. Energ. Mater. Sol. Cell.,2003

3. Low energy proton irradiation effects on GaAs/Ge space solar cells;Rong;Sol. Energ. Mater. Sol. Cell.,2006

4. High-radiation-resistant InGaP, InGaAsP, and InGaAs solar cells for multijunction solar cells;Dharmarasu;Appl. Phys. Lett.,2001

5. The effects of electron on triple-junction GaInP/GaAs/Ge solar cells;Cotal;Proc. IEEE 28th PVSC,2000

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