Dose-rate dependence of radiation-induced interface trap density in silicon bipolar transistors-Reference-Cited by-同舟云学术

Dose-rate dependence of radiation-induced interface trap density in silicon bipolar transistors

Published:2006-09 Issue:1-2 Volume:250 Page:269-273
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Hjalmarson H.P.,Pease R.L.,Hembree C.E.,Van Ginhoven R.M.,Schultz P.A.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference27 articles.

1. Ionizing Radiation Effects in MOS Devices and Circuits,1989

3. The defect structure of Si-SiO2 interface: A model based on trivalent silicon and its hydrogen compounds;Svensson,1979

4. The role of hydrogen in interface trap creation by radiation in MOS devices – a review;Saks,1993

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

2. Ionization Damage Effect in SiGe HBT;Research on the Radiation Effects and Compact Model of SiGe HBT;2017-10-24

3. Introduction;Research on the Radiation Effects and Compact Model of SiGe HBT;2017-10-24