Application and development of ion-source technology for radiation-effects testing of electronics-Reference-Cited by-同舟云学术

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Application and development of ion-source technology for radiation-effects testing of electronics

Published:2017-09 Issue: Volume:406 Page:205-209
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Kalvas T.,Javanainen A.,Kettunen H.,Koivisto H.,Tarvainen O.,Virtanen A.

Funder

Integrating Activities — Transnational Access

Academy of Finland

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference19 articles.

1. Single-event effects ground testing and on-orbit rate prediction methods: the past, present, and future

2. Mean energy required to produce an electron-hole pair in silicon for photons of energies between 50 and 1500 eV

3. From the Reference SEU Monitor to the Technology Demonstration Module On-Board PROBA-II

4. Rate prediction for single event effects-a critique

5. “Single event effects test method and guidelines”, ESCC Basic Specification No. 25100, Eurepean Space Agency, 2014.

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ion beam intensity and phase space measurement techniques for ion sources;Review of Scientific Instruments;2022-01-01

2. Status of new 18 GHz ECRIS HIISI;AIP Conference Proceedings;2018

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