1. A. Agarwal, in: 2000 Intern. Conf. on Ion Implantation Tech. Proceedings, 2000, p. 293
2. Backscattering Spectrometry;Chu,1978
3. Material Characterization using Ion Beams;Verbeek,1978
4. Concentration-depth calibration and bombardment-induced impurity relocation in SIMS depth profiling of shallow through-oxide implantation distributions: a procedure for eliminating the matrix effect
5. J. Bennett, in: D.G. Seiler, A.C. Diebold, T.J. Shaffner, R. McDonald, W.M. Bullis, P.J. Smith, E.M. Secula (Eds.), Characterization and Metrology for ULSI Technology: 2000 International Conference, 2001, p. 665