Analysis of ion implanted silicon by RBS-channeling: influence of the damage model
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference10 articles.
1. ON THE NUMBER OF ATOMS DISPLACED BY IMPLANTED IONS OR ENERGETIC RECOIL ATOMS
2. Location of self-interstitial atoms in boron-implanted silicon by means of rutherford backscattering of channelled ions
3. A study on the self-interstitial structure of radiation damaged silicon by means of the double alignment channeling technique
4. Investigation of weakly damaged 〈110〉, 〈111〉 and 〈100〉 silicon by means of temperature dependent dechanneling measurements
5. Atomistic modeling of ion channeling in Si with point defects: The role of lattice relaxation
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Structural and magnetic characterization of cobalt implanted GaN films;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2011-05
2. Computerized Control and Operation of Rutherford Backscattering/Channeling for an in situ Ion Beam System and Its Application for Measurement of Si(001) and ZnO(001);Chinese Physics Letters;2011-01
3. Investigation of heavily damaged ion implanted Si by atomistic simulation of Rutherford backscattering channeling spectra;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2005-04
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