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Analysis of Total Ionizing Dose effects for highly scaled CMOS devices in Low Earth Orbit

  • Published:2018-08 Issue: Volume:428 Page:30-37
  • ISSN:0168-583X
  • Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
  • language:en
  • Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Sajid Muhammad,Chechenin N.G.,Sill Torres Frank,Nabeel Hanif Muhammad,Gulzari Usman Ali,Arslan Shakaib,Khan Ehsan Ullah

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference15 articles.

1. Total-ionizing-dose effects on isolation oxides in modern CMOS technologies;Barnaby;Nucl. Instr. Meth. B,2007

2. IADC Space Debris Mitigation Guidelines, Inter-Agency Space Debris Coordination Committee, 10/15 2002.

3. The Effects of Space Environments on Electronic Components;Petkov,2003

4. Radiation-induced soft errors in advanced semiconductor technologies;Baumann;IEEE Trans. Device Mater. Reliab.,2005

5. Electron and hole mobilities in silicon as a function of concentration and temperature;Arora;IEEE Trans. Electron Devices,1982

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4. Dynamic modeling of total ionizing dose-induced threshold voltage shifts in MOS devices;Chinese Physics B;2023-01-01

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