Channeling experiments with sub-GeV electrons in flat silicon single crystals

Author:

Backe H.,Lauth W.

Funder

European Commission IRSES

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Cited by 21 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Surface-barrier detector with smoothly tunable thickness of depleted layer for study of ionization loss and dechanneling length of negatively charged particles channeling in a crystal;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2024-02

2. Atomistic modelling of electron propagation and radiation emission in oriented bent ultra-thin Si and Ge crystals;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2024-01

3. RADIATION OF HIGH-ENERGY ELECTRONS WHEN CHANNELING IN THE BENT SILICON AND GERMANIUM MONOCRYSTALS;ST PETER POLY U J-PH;2023

4. Design study for a 500 MeV positron beam at the Mainz Microtron MAMI;The European Physical Journal D;2022-08

5. Novel Light Sources Beyond FELs;Lecture Notes in Nanoscale Science and Technology;2022

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