Temperature-dependent photoluminescence processes of GaInP top cell irradiated with 11.5 MeV and 1.0 MeV electrons
Author:
Funder
National Natural Science Foundation of China
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference8 articles.
1. Temperature-dependent photoluminescence analysis of 1.0 MeV electron irradiation-induced nonradiative recombination centers in n+-p GaAs middle cell for GaInP/GaAs/Ge triple-junction solar cells;Wang;Chin. Phys. Lett.,2017
2. Negative thermal quenching of the defects in GaInP top cell with temperature-dependent photoluminescence analysis;Wang;Nucl. Instr. Meth. B,2018
3. Negative thermal quenching curves in photoluminescence of solids;Shibata;Jpn. J. Appl. Phys.,1998
4. Performance degradation of InGaP solar cells due to 70 keV electron irradiation;Okuno;Jpn. J. Appl. Phys.,2017
5. Temperature dependence of the energy gap in semiconductors;Varnish;Physica,1967
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