Optimization of pre-amorphization and dopant implant conditions for advanced annealing-Reference-Cited by-同舟云学术

Optimization of pre-amorphization and dopant implant conditions for advanced annealing

Published:2005-08 Issue:1-2 Volume:237 Page:35-40
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Felch S.B.,Graoui H.,Tsai G.,Mayur A.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference7 articles.

1. The International Technology Roadmap for Semiconductors, 2001.

2. S. Talwar, S. Felch, D. Downey, Y. Wang, in: 2000 Int. Conf. on Ion Implantation Technology Proc., 2000, p. 175.

3. Proc. of Seventh Int. Workshop on Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors;McCoy,2003

4. A. Al-Bayati, S. Tandon, A. Mayur, M. Foad, D. Wagner, R. Murto, D. Sing, C. Ferguson, L. Larson, in: 2000 Int. Conf. on Ion Implantation Technology Proc., 2000, p. 54.

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