Author:
Gennaro S.,Barozzi M.,Bersani M.,Sealy B.J.,Gwilliam R.
Subject
Instrumentation,Nuclear and High Energy Physics
Reference10 articles.
1. Microscopical aspects of boron diffusion in ultralow energy implanted silicon
2. Structural and electrical properties of p+n junctions in Si by low energy Ga+ implantation
3. Indium transient enhanced diffusion
4. Indium clustering in a silicon matrix in the presence of carbon co-implantation
5. S. Gennaro, B.J. Sealy, C. Jeynes, E.J.H. Collart, A. Licciardello, R. Gwilliam, in: Proceedings of 14th International Conference on Ion Implantation Technology (IIT 2002, Taos, NM, USA), IEEE Piscataway (NJ) USA, 2003, p. 552.
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2 articles.
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