Post-annealing effect on the microstructure and photoluminescence properties of the ion beam synthesized FeSi2 precipitates in Si
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference16 articles.
1. Room‐temperature electroluminescence from Er‐doped crystalline Si
2. A silicon/iron-disilicide light-emitting diode operating at a wavelength of 1.5 μm
3. Origin and perspectives of the 1.54 μm luminescence from ion-beam-synthesized β-FeSi2 precipitates in Si
4. Microstructure of β-FeSi2 thin films prepared by pulsed laser deposition
5. Investigation of direct and indirect band gaps of [100]-oriented nearly strain-free β-FeSi2 films grown by molecular-beam epitaxy
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Nanoscale triboactivity of functionalized c-Si surfaces by Fe+ion implantation;Journal of Physics: Condensed Matter;2016-03-02
2. Microstructure and nanomechanical properties of Fe+ implanted silicon;Applied Surface Science;2013-11
3. Semiconducting beta-phase FeSi2 for light emitting diode applications: Recent developments, challenges, and solutions;Thin Solid Films;2013-06
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