Evaluation of the excess and clustered silicon profiles in a silicon implanted SiO2 layer-Reference-Cited by-同舟云学术

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Evaluation of the excess and clustered silicon profiles in a silicon implanted SiO2 layer

Published:2007-04 Issue:1-2 Volume:257 Page:104-107
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Nicotra G.,Franzò G.,Spinella C.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference9 articles.

1. Observation of the nucleation kinetics of Si quantum dots on SiO2 by energy filtered transmission electron microscopy

2. Formation and evolution of luminescent Si nanoclusters produced by thermal annealing of SiOx films

3. Nucleation kinetics of Si quantum dots on SiO2

4. Quantitative determination of the clustered silicon concentration in substoichiometric silicon oxide layer

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nanocluster and Nanovoid Formation by Ion Implantation;Ion Beams in Nanoscience and Technology;2009

2. Effect of low-temperature treatments on photoluminescence enhancement of ion-beam synthesized Si nanocrystals in SiO2 matrix;Semiconductor physics, quantum electronics and optoelectronics;2008-10-30

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