Analysis of N isotope depth profiles in search for reaction of implanted nitrogen with substrate near Si3N4–nitride-film and SiO2-glass-substrate interface-Reference-Cited by-同舟云学术

Analysis of N isotope depth profiles in search for reaction of implanted nitrogen with substrate near Si3N4–nitride-film and SiO2-glass-substrate interface

Published:2006-08 Issue:1-2 Volume:249 Page:185-188
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Matsunami N.,Murase T.,Tazawa M.,Ninad S.,Fukuoka O.,Shimura T.,Sataka M.,Chimi Y.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference6 articles.

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2. Chemical interaction in ion-implanted amorphous SiO2 and application to formation and modification of nanosize colloid particles

3. The Stopping and Range of Ions in Solids;Ziegler,1985

4. N. Matsunami (private communication).

5. N. Matsunami (private communication) and the value is somewhat larger than 1.35mb/sr at 150° with 1.2MeV d (Ion beam handbook, J.R. Tesmer, M. Nastasi, J.C. Barbour, J.W. Mayer, MRS, 1995).

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