Change of structural and electrical properties of diamond with high-dose ion implantation at elevated temperatures: Dependences on donor/acceptor impurity species-Reference-Cited by-同舟云学术

Change of structural and electrical properties of diamond with high-dose ion implantation at elevated temperatures: Dependences on donor/acceptor impurity species

Published:2012-09 Issue: Volume:286 Page:303-307
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Tsubouchi Nobuteru,Shikata S.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference12 articles.

1. Damage threshold for ion‐beam induced graphitization of diamond

2. Instantaneous annealing of CVD diamond during high dose-rate ion implantation

3. Correlation between low threshold emission and C–N bond in nitrogen-doped diamond films

4. Electrical and photoelectrical characterization of undoped and S-doped nanocrystalline diamond films

5. Stopping and Range of Ions in Matter;Ziegler,1985

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ion implantation in wide and ultra-wide bandgap semiconductors;Reference Module in Materials Science and Materials Engineering;2023

2. Radiation Damage in (001) Diamond Induced by Phosphorus Ion Implantation;physica status solidi (a);2022-02-04

3. Weak Electron Irradiation Suppresses the Anomalous Magnetization of N‐Doped Diamond Crystals;physica status solidi (b);2021-09-28

4. Irradiation-Induced Modification of the Superconducting Properties of Heavily-Boron-Doped Diamond;Physical Review Applied;2018-10-05

5. Doping and semiconductor characterizations;Power Electronics Device Applications of Diamond Semiconductors;2018