EXAFS study on local structure of GaMnAs thin film made by Mn ion implantation following with ion beam induced epitaxial crystallization-Reference-Cited by-同舟云学术

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EXAFS study on local structure of GaMnAs thin film made by Mn ion implantation following with ion beam induced epitaxial crystallization

Published:2019-07 Issue: Volume:450 Page:361-363
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Chen ChienHsu^ORCID,Hsieh H.H.,Niu Huan^ORCID

Funder

Ministry of Science and Technology, Taiwan

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference24 articles.

1. (Ga, Mn)As: a new diluted magnetic semiconductor based on GaAs;Ohno;Appl. Phys. Lett.,1996

2. Growth and properties of (Ga, Mn) As: a new III-V diluted magnetic semiconductor;Matsukura;Appl. Surf. Sci.,1997

3. A group-IV ferromagnetic semiconductor: MnxGe1−x;Park;Science,2002

4. Prospects for high temperature ferromagnetism in (Ga, Mn)As semiconductors;Jungwirth;Phys. Rev. B,2005

5. Magnetism in (Ga, Mn)As thin films with T[sub C] Up To 173K;Wang;AIP Conf. Proc.,2005

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