Submicron beam X-ray diffraction of nanoheteroepitaxily grown GaN: Experimental challenges and calibration procedures-Reference-Cited by-同舟云学术

Submicron beam X-ray diffraction of nanoheteroepitaxily grown GaN: Experimental challenges and calibration procedures

Published:2010-02 Issue:3-4 Volume:268 Page:320-324
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Bonanno P.L.,Gautier S.,Sirenko A.A.,Kazimirov A.,Cai Z.-H.,Goh W.H.,Martin J.,Martinez A.,Moudakir T.,Maloufi N.,Assouar M.B.,Ramdane A.,Gratiet L. Le,Ougazzaden A.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference12 articles.

1. Strain relaxation and surface migration effects in InGaAlAs and InGaAsP selective-area-grown ridge waveguides

2. Intrafacet migration effects in InGaN∕GaN structures grown on triangular GaN ridges studied by submicron beam x-ray diffraction

3. A novel multi-detection technique for three-dimensional reciprocal-space mapping in grazing-incidence X-ray diffraction

4. Synchrotron high angular resolution microdiffraction analysis of selective area grown optoelectronic waveguide arrays

5. Structural properties of self-organized semiconductor nanostructures

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1. Strain-Reduction Induced Rise in Channel Temperature at Ohmic Contacts of GaN HEMTs;IEEE Access;2018

2. Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template;Journal of Applied Physics;2014-10-28

3. High performance TiN gate contact on AlGaN/GaN transistor using a mechanically strain induced P-doping;Applied Physics Letters;2014-06-09

4. Nondestructive mapping of chemical composition and structural qualities of group III-nitride nanowires using submicron beam synchrotron-based X-ray diffraction;Thin Solid Films;2013-08