Effect of radiation damage on the migration behaviour of europium implanted into polycrystalline SiC at RT, 350 °C and 600 °C-Reference-Cited by-同舟云学术

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Effect of radiation damage on the migration behaviour of europium implanted into polycrystalline SiC at RT, 350 °C and 600 °C

Published:2020-09 Issue: Volume:478 Page:260-268
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Mohlala T.M.,Malherbe J.B.,Hlatshwayo T.T.

Funder

University of Pretoria

University of Jena

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference32 articles.

1. Fracture toughness of polycrystalline silicon carbide thin films;Bellante;Appl. Phys. Lett.,2005

2. SEM analysis of the microstructure of the layers in triple-coated isotropic (TRISO) particles;van der Berg;Surf. Interface Anal.,2010

3. Radiation enhanced diffusion of cesium, strontium, and europium in silicon carbide;Dwaraknath;J. Nucl. Mater.,2016

4. Inis.iaea.org. (2018). [online] Available at: https://inis.iaea.org/collection/NCLCollectionStore/_Public/29/009/29009817.pdf [Accessed 3 Dec. 2018].

5. Nwmissouri.edu. (2020). [online] Available at: https://www.nwmissouri.edu/naturalsciences/sds/s/Silver%20Wire.pdf [Accessed 27 Feb. 2020].

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