Dispersion of heavy ion deposited energy in nanometric electronic devices: Experimental measurements and simulation possibilities-Reference-Cited by-同舟云学术

Dispersion of heavy ion deposited energy in nanometric electronic devices: Experimental measurements and simulation possibilities

Published:2015-12 Issue: Volume:365 Page:636-640
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Raine M.,Gaillardin M.,Paillet P.,Duhamel O.,Martinez M.,Bernard H.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference13 articles.

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3. Experimental evidence of large dispersion of deposited energy in thin active layer devices;Raine;IEEE Trans. Nucl. Sci.,2011

4. M. Gaillardin, M. Raine, P. Paillet, S. Girard, P.C. Adell, O. Duhamel, F. Andrieu, S. Barraud, O. Faynot, Charge collection analysis under heavy ion irradiation in multiple-gate devices: FinFETs and nanowires, in: Presented at NSREC 2013, 2013.

5. Laser probing of bipolar amplification in 0.25-μm MOS/SOI transistors;Musseau;IEEE Trans. Nucl. Sci.,2000

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