Ultra-shallow junction (USJ) sheet resistance measurements with a non-penetrating four point probe-Reference-Cited by-同舟云学术

Ultra-shallow junction (USJ) sheet resistance measurements with a non-penetrating four point probe

Published:2005-08 Issue:1-2 Volume:237 Page:351-355
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Benjamin M.C.,Hillard R.J.,Borland J.O.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference9 articles.

1. R.J. Hillard, P.Y. Hung, W. Chism, C. Win Ye, W.H. Howland, L.C. Tan, C.E. Kalnas, Characterization and metrology for ULSI technology, in: AIP Conference Proceedings, 2003, Vol. 683, p. 802.

2. USJ Conference Short Course, Sixth International Workshop on Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors, Napa, CA. 2001.

3. underlineSub-100nm CMOS, IEDM Conference Short Course, IEEE 1999.

4. Semiconductor Material and Device Characterization;Schroder,1998

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