Author:
Raffo Antonio,Vadalà Valeria,Traverso Pier Andrea,Santarelli Alberto,Vannini Giorgio,Filicori Fabio
Subject
Law,Hardware and Architecture,Software
Reference16 articles.
1. Accurate PHEMT nonlinear modeling in the presence of low-frequency dispersive effects;Raffo;IEEE Trans. Microwave Theory Tech.,2005
2. Modeling intermodulation distortion in GaAs MESFETs using pulsed I–V characteristics;Struble,1991
3. A temperature-dependent nonlinear analytic model for AlGaN–GaN HEMTs on SiC;Lee;IEEE Trans. Microwave Theory Tech.,2004
4. A frequency dispersion model of GaAs MESFET for large-signal applications;Jeon;IEEE Microwave Guided Wave Lett.,1997
5. Pulse measurements quantify dispersion in pHEMT's;Parker,1998
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Empowering GaN HEMT models: The gateway for power amplifier design;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2015-11-25