The dependence of the strain effects on the ZnTe layer thicknesses in ZnTe/GaAs heterostructures
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference17 articles.
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1. Epitaxial characteristics of MBE-grown ZnTe thin films on GaAs (211)B substrates;Applied Physics A;2019-10-09
2. Photoluminescence characteristics of ZnTe bulk crystal and ZnTe epilayer grown on GaAs substrate by MOVPE;Chinese Physics B;2015-12
3. Effects of substrate temperature upon optical properties of ZnTe epilayers grown on (100) GaAs substrates by MOVPE;physica status solidi (a);2012-06-26
4. Characterization of epitaxial ZnTe layers grown on GaAs substrates by transmission electron microscopy and photoluminescence;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2012-03
5. Effect of gas flow rate on surface morphology and crystal quality of ZnTe epilayers grown on GaAs substrates;Materials Research Bulletin;2011-04
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