Schottky properties of CuInSe2 single crystals grown by the horizontal Bridgman method with controlling Se vapor pressure
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference11 articles.
1. Al/p‐CuInSe2metal‐semiconductor contacts
2. Hole tunneling through the In/p-CuInSe2 Schottky barrier
3. Single crystal growth of CuInSe2 by selenization horizontal Bridgman method
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