Optical properties of epitaxial CuGaS2 layers on Si(111)-Reference-Cited by-同舟云学术

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Optical properties of epitaxial CuGaS2 layers on Si(111)

Published:2003-09 Issue:9-10 Volume:64 Page:1781-1785
ISSN:0022-3697
Container-title:Journal of Physics and Chemistry of Solids
language:en
Short-container-title:Journal of Physics and Chemistry of Solids

Author:

Eberhardt J.,Metzner H.,Hahn Th.,Reislöhner U.,Cieslak J.,Grossner U.,Goldhahn R.,Hudert F.,Gobsch G.,Witthuhn W.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference10 articles.

1. Epitaxial growth of wide-gap chalcopyrite materials—current state and future;Kukimoto;Jpn. J. Appl. Phys.,1993

2. Photoluminescence of CuGaS2 epitaxial layers grown by metalorganic vapor phase epitaxy;Shirakata;J. Appl. Phys.,2000

3. Epitaxal growth of CuGaS2 on Si(111);Metzner;Appl. Phys. Lett.,2002

4. Thin CuInS2 films by three source molecular beam deposition;Gossla;Thin Solid Films,1995

5. Molecular beam epitaxial growth and material properties of GaAs and AlGaAs on Si(100);Wang;Appl. Phys. Lett.,1984

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