The high temperature electrical properties of ZnTe: Al; self-compensation model in ZnTe
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference16 articles.
1. Self-Compensation-Limited Conductivity in Binary Semiconductors. II.n-ZnTe
2. Composition stability limits of binary semiconductor compounds
3. Self-Compensation Limited Conductivity in Binary Semiconductors. I. Theory
4. The effect of doubly ionizable vacancy acceptors on the conductivity of donor doped semiconducting compounds with special reference to CdTe and ZnTe
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1. Determination of Mean Inner Potential and Inelastic Mean Free Path of ZnTe Using Off-Axis Electron Holography and Dynamical Effects Affecting Phase Determination;Microscopy and Microanalysis;2015-11-27
2. High temperature electrical conductivity in ZnSe:In and in CdSe:In under selenium vapor pressure;physica status solidi (b);2007-05
3. Evidence of Harrison's type A and B diffusion regimes in II - VI semiconductors;Semiconductor Science and Technology;1997-09-01
4. Hopping Conductivity and Electron Localization in Heavily Doped ZnSe;physica status solidi (b);1984-10-01
5. The segregation of impurities and the self‐compensation problem in II‐VI compounds;Journal of Applied Physics;1982-12
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