Robust ferroelectric-gating-dependent electronic and magnetic properties in a 1T-VSe2/BiAlO3(0001) multiferroic heterostructure
Author:
Publisher
Elsevier BV
Subject
Physics and Astronomy (miscellaneous),Energy (miscellaneous),General Materials Science
Reference65 articles.
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Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Ferroelectric polarization tailored spin polarized electronic structure and magnetic anisotropy in two-dimensional ScSi2N4/CuInP2S6 multiferroic heterostructures;Journal of Physics D: Applied Physics;2023-09-28
2. Polarization-tunable interfacial properties in monolayer-MoS2 transistors integrated with ferroelectric BiAlO3(0001) polar surfaces;Physical Chemistry Chemical Physics;2023
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