Comparison of a-SiC:H and a-SiN:H as candidate materials for a p-i interface layer in a-Si:H p-i-n solar cells-Reference-Cited by-同舟云学术

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Comparison of a-SiC:H and a-SiN:H as candidate materials for a p-i interface layer in a-Si:H p-i-n solar cells

Published:2010-08 Issue:1 Volume:2 Page:227-234
ISSN:1876-6102
Container-title:Energy Procedia
language:en
Short-container-title:Energy Procedia

Author:

Vet B.,Zeman M.

Publisher

Elsevier BV

Reference17 articles.

1. Amorphous siliconp‐i‐nsolar cells with graded interface

2. Computer simulation model of the effects of interface states on high‐performance amorphous silicon solar cells

3. Steven S. Hegedus, Con. Rec. IEEE PV Spec Conference, 1, 1988, pp. 102-107.

4. Use of a carbon‐alloyed graded‐band‐gap layer at thep/iinterface to improve the photocharacteristics of amorphous silicon alloyedp‐i‐nsolar cells prepared by photochemical vapor deposition

5. Relation between the open-circuit voltage and the band gap of absorber and buffer layers in a-Si:H solar cells

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1. Silicon Nitride and Hydrogenated Silicon Nitride Thin Films: A Review of Fabrication Methods and Applications;Materials;2021-09-28

2. Investigation of the interface defect density at pm-Si:H/c-Si and the surface recombination speeds on silicon heterojunction solar cells;Optik;2020-12

3. Modelling and performance analysis of amorphous silicon solar cell using wide band gap nc‐Si:H window layer;IET Circuits, Devices & Systems;2017-11

4. Absorption and Photocurrent Spectroscopy with High Dynamic Range;Advanced Characterization Techniques for Thin Film Solar Cells;2016-07-22

5. Argon Plasma Treatment at the i-/p-Interface in Silicon Thin-Film Solar Cells and its Influence on the Light Induced Degradation;Energy Procedia;2015-12

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