High efficiency n-PERT solar cells by B/P co-diffusion method

Author:

Wei Qingzhu,Zhang Shude,Yu Shuanglong,Lu Junyu,Lian Weifei,Ni Zhichun

Publisher

Elsevier BV

Reference11 articles.

1. On the degradation of Czochralski silicon solar cells;Glunz;Proceedings of the 2nd World Conference on Photovoltaic Solar Energy Conversion,1998

2. Minority carrier lifetime degradation in boron-doped Czochralski silicon;Glunz;Journal of Applied Physics,2001

3. Recombination activity of interstitial iron and other transition metal point defects in p and n type crystalline silicon;Macdonald;Applied Physics Letters,2004

4. P-type versusn-type silicon wafers: prospects for high-efficiency commercial silicon solar cells;Cotter;15th workshop on crystalline silicon solar cells & modules: materials and processes, Colorado, USA, August,2005

5. Fujishima D, Inoue H, Tsunomura Y, et al. High-performance HIT solar cells for thinner silicon wafers. Photovoltaic Specialists Conference (PVSC), 35th IEEE, 2010:003137-003140.

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