20.5% Efficiency on Large Area N-type PERT Cells by Ion Implantation

Author:

Lanterne Adeline,Le Perchec Jérôme,Gall Samuel,Coig Marianne,Tauzin Aurélie,Veschetti Yannick

Publisher

Elsevier BV

Reference11 articles.

1. The status and future of industrial n-type silicon solar cells;Kopecek;Photovoltaics International,2013

2. Understanding light-induced degradation of c-Si solar cells;Sopori;38th IEEE Photovoltaic Specialists Conference,2012

3. Recombination activity of interstitial iron and other transition metal point defects in p- and n-type crystalline silicon;Macdonald;Applied Physics Letters,2004

4. S. Gall, A. Lanterne, S. Manuel, V. Sanzone,, R. Cabal, Y. Veschetti, A. Bettinelli, H. Robin, P. Lefillastre, C. Gillot. “High efficient Industrial n-type Technology: From cell to module” proceeding of the 28th EU PVSEC, Paris, France, 2013.

5. A. Rohatgi, D.L. Meier, B. McPherson, Y.-W. Ok, A.D. Upadhyaya, J.-H. Lai, and F. Zimbardi, “High-throughput ion-implantation for low-cost high-efficiency silicon solar cells,” Energy Procedia, vol. 15, pp. 10-19, Jan. 2012.

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