Quantitative Surface Recombination Imaging of Single Side Processed Silicon Wafers Obtained by Photoluminescence Modeling-Reference-Cited by-同舟云学术

Quantitative Surface Recombination Imaging of Single Side Processed Silicon Wafers Obtained by Photoluminescence Modeling

Published:2014 Issue: Volume:55 Page:63-70
ISSN:1876-6102
Container-title:Energy Procedia
language:en
Short-container-title:Energy Procedia

Author:

Fell Andreas,Walter Daniel,Yang Xinbo,Surve Sachin,Franklin Evan,Weber Klaus,MacDonald Daniel

Publisher

Elsevier BV

Reference24 articles.

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3. Spatially resolved series resistance of silicon solar cells obtained from luminescence imaging;Trupke;Applied Physics Letters,2007

4. Recombination current and series resistance imaging of solar cells by combined luminescence and lock-in thermography;Ramspeck;Applied Physics Letters,2007

5. Luminescence imaging for the detection of shunts on silicon solar cells;Kasemann;Progress in Photovoltaics: Research and Applications,2008

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2. Low-temperature micro-photoluminescence spectroscopy on laser-doped silicon with different surface conditions;Applied Physics A;2016-03-21

3. Passivated contacts to laser doped p+ and n+ regions;Solar Energy Materials and Solar Cells;2015-09

4. High efficiency n-type silicon solar cells featuring passivated contact to laser doped regions;Applied Physics Letters;2015-03-16