Characterization of Al2O3 Thin Films Prepared by Thermal ALD-Reference-Cited by-同舟云学术

Characterization of Al2O3 Thin Films Prepared by Thermal ALD

Published:2015-08 Issue: Volume:77 Page:558-564
ISSN:1876-6102
Container-title:Energy Procedia
language:en
Short-container-title:Energy Procedia

Author:

Barbos Corina,Blanc-Pelissier Danièle,Fave Alain,Blanquet Elisabeth,Crisci Alexandre,Fourmond Erwann,Albertini David,Sabac Andreï,Ayadi Khaled,Girard Philippe,Lemiti Mustapha

Publisher

Elsevier BV

Reference7 articles.

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2. Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge;Agostinelli;Sol. Energy Mater.Sol. Cells,2006

3. Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells.J;Dingemans;Vac. Sci. Technol. A,2012

4. H. Fujiwara, Spectroscopic Ellipsometry: Principles and Applications. Ed. John Wiley &Sons (2007).

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