Author:
Oliveira Vanessa A.,Sio Hang Cheong,Faujour Alexandre,Piot Lucas,Chabli Amal,Camel Denis
Reference14 articles.
1. F. Jay, D. Muñoz, T. Desrues, E. Pihan, V. Amaral de Oliveira, N. Enjalbert and A. Jouini, Advanced process for n-type mono-like silicon a-Si:H/c-Si heterojunction solar cells with 21.5% efficiency, Sol. Energy Mater. Sol. Cells. (2014) 1-6.
2. Distribution and propagation of dislocation defects in quasi-single crystalline silicon ingots cast by the directional solidification method;Zhang;Sol. Energy Mater. Sol. Cells.,2015
3. H.C. Sio, T. Trupke, D. Macdonald, Quantifying carrier recombination at grain boundaries in multicrystalline silicon wafers through photoluminescence imaging, J. Appl. Phys. 116 (2014) 244905 1-9.
4. Theory of beam induced current characterization of grain boundaries in polycrystalline solar cells;Donolato;J. Appl. Phys.,1983
5. 20% PERT technology adapted to n-type mono-like silicon: simplified process and narrowed cell efficiency distribution;Cabal;Proceeding of the 29th European Photovoltaic Solar Energy Conference and Exhibition,2014
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献