Author:
Richter Armin,Benick Jan,Kalio André,Seiffe Johannes,Hörteis Matthias,Hermle Martin,Glunz Stefan W.
Reference27 articles.
1. Glunz SW, et al. n-type silicon - enabling efficiencies>20% in industrial production. Proceedings of the 35th IEEE Photovoltaic Specialists Conference, Honolulu, USA, 2010.
2. Fischer H and Pschunder W. Investigation of photon and thermal induced changes in silicon solar cells. Proceedings of the 10th IEEE Photovoltaic Specialists Conference, Palo Alto, California, USA, 1973.
3. Minority carrier lifetime degradation in boron-doped Czochralski silicon;Glunz;J. Appl. Phys.,2001
4. Structure and transformation of the metastable boron- and oxygen-related defect center in crystalline silicon;Schmidt;Phys. Rev. B,2004
5. Recombination activity of interstitial iron and other transition metal point defects in p- and n-type crystalline silicon;Macdonald;Appl. Phys. Lett.,2004
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