Influence of the Front Surface Passivation Quality on Large Area n-Type Silicon Solar Cells with Al-Alloyed Rear Emitter

Author:

Book F.,Wiedenmann T.,Schubert G.,Plagwitz H.,Hahn G.

Publisher

Elsevier BV

Reference13 articles.

1. Minority Carrier Lifetime Degradation in Boron-Doped Czochralski Silicon;Glunz;J Appl Phys,2001

2. Recombination Activity of Interstitial Iron and Other Transition Metal Point Defects in p- and n-Type Crystalline Silicon;Macdonald;Appl Phys Lett,2004

3. Aluminum Alloy Back p-n Junction Dendritic Web Silicon Solar Cell;Meier;Solar Energy Materials and Solar Cells,2001

4. Buck T, Libal J, Eisert S, Kopecek R, Peter K, Fath P, et al. Low Cost p+nn+-Type Back Junction Solar Cells by Screen Pinting Technique on Cz and mc-Si Material. Proc. 19th EU PVSEC, Paris 2004, p. 1255-8.

5. Mihailetchi VD, Sainova DS, Geerligs LJ, Weeber AW. 17.4% Efficiency Solar Cells on Large-Area and Thin n-Type Silicon with Screen-Printed Aluminum-Alloyed Rear Emitter. Proc. 22nd EU PVSEC, Milan 2007, p. 837-40.

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