High voltage electron microscope study of defects in silicon-Reference-Cited by-同舟云学术

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High voltage electron microscope study of defects in silicon

Published:1983-02 Issue:1-3 Volume:116 Page:606-611
ISSN:0378-4363
Container-title:Physica B+C
language:en
Short-container-title:Physica B+C

Author:

Oshima R.,Sadamitsu S.,Fujita F.E.

Publisher

Elsevier BV

Subject

General Engineering

Reference12 articles.

1. Point Defects;Kiritani,1977

2. Lattice Defects in Semiconductors;Föll,1975

3. Nature of Secondary Defects in Silicon Produced by High Temperature Electron Irradiation

4. Inst. Phys. Conf. Ser. No.59;Asahi,1981

5. Inst. Phys. Conf. Ser. No.59;Kiritani,1981

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Formation mechanism of grown-in defects in silicon;Journal of Physics and Chemistry of Solids;2008-02

2. Intrinsic Point Defects and Grown-in Defects in Silicon;Solid State Phenomena;1999-10

3. Structure analysis of defects in nanometer space inside a crystal: Creation and agglomeration of point defects in Si and Ge revealed by high-resolution electron microscopy;Microscopy Research and Technique;1998-02-15

4. Point Defect Behaviour Resulting from Dopant Diffusions in Silicon;Defect and Diffusion Forum;1997-03

5. Atomic Structure of a Defect Colony in Silicon Introduced during Neutron Irradiation in the JOYO Reactor;Journal of Electron Microscopy;1996-10-01

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