Pairing reactions of interstitial cobalt and shallow acceptors in silicon observed in Mössbauer spectroscopy-Reference-Cited by-同舟云学术

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Pairing reactions of interstitial cobalt and shallow acceptors in silicon observed in Mössbauer spectroscopy

Published:1983-02 Issue:1-3 Volume:116 Page:312-317
ISSN:0378-4363
Container-title:Physica B+C
language:en
Short-container-title:Physica B+C

Author:

Bergholz W.

Publisher

Elsevier BV

Subject

General Engineering

Reference12 articles.

1. The solution of iron in silicon

Cited by 27 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Cobalt-related defects in silicon;Journal of Applied Physics;2017-01-28

2. Mössbauer parameters of Fe-related defects in group-IV semiconductors: First principles calculations;Journal of Applied Physics;2016-05-14

3. Transition metals (Ti and Co) in silicon and their complexes with hydrogen: A Laplace DLTS study;Physica B: Condensed Matter;2014-04

4. Isolated substitutional cobalt and Co-related complexes in silicon;Journal of Applied Physics;2013-05-14

5. Formation of Fe i –B pairs in silicon at high temperatures;Hyperfine Interactions;2006-12-05

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