A molecular cluster study of complex defects in Si: The divacancy and the E center-Reference-Cited by-同舟云学术

A molecular cluster study of complex defects in Si: The divacancy and the E center

Published:1983-02 Issue:1-3 Volume:116 Page:90-94
ISSN:0378-4363
Container-title:Physica B+C
language:en
Short-container-title:Physica B+C

Author:

Fazzio A.,Leite J.R.,Caldas M.J.

Publisher

Elsevier BV

Subject

General Engineering

Reference19 articles.

1. Electrical properties of electron irradiated n-type silicon;Sigfridsson;J. Appl. Phys.,1976

2. Electron-irradiation-induced divacancy in lightly doped silicon;Evwaraye;J. Appl. Phys.,1976

3. Defects in irradiated silicon: Electron aramagnetic resonance of the divacancy;Watkins;Phys. Rev.,1965

4. Energy dependence of defect energy levels in electron irradiated silicon;Krynicki;Rev. Phys. Appl.,1979

5. Influence of the Fermi energy on the efficiency of generation of radiation defects by electron bombardment of silicon;Milevskii;Fiz. Tekh. Poluprovodn.,1976

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1. A unified microscopic mechanism for donor deactivation in Si;Physica B: Condensed Matter;1999-12

2. Electronic structure of Al, P, S, and Cl impurities in silicon;International Journal of Quantum Chemistry;1998-12-06

3. Investigation of the electronic structure of defects in tetrahedral semiconductors by the Green's-function method;Journal of Structural Chemistry;1987

4. Microscopic models for Cu, Ag and Au cationic substitutional impurities and the metal vacancy in ZnSe;Solid State Communications;1986-11

5. Defect-molecule parameters for the divacancy in silicon;Solid State Communications;1985-03