Changes of the excitonic spectra of GaSe induced by optical excitation-Reference-Cited by-同舟云学术

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Changes of the excitonic spectra of GaSe induced by optical excitation

Published:1980-01 Issue:1-4 Volume:99 Page:299-302
ISSN:0378-4363
Container-title:Physica B+C
language:en
Short-container-title:Physica B+C

Author:

Staehli J.L.,Frova A.

Publisher

Elsevier BV

Subject

General Engineering

Reference22 articles.

1. Structural Chemistry of Layer Type Phases;Hulliger,1976

2. G. Gobbi, J.L. Staehli, M. Guzzi and V. Capozzi, to be published in Helvetica Physica Acta.

3. Near-edge spontaneous photoluminescence in GaSe1–xSx

4. GaSe: A layer compound with anomalous valence band anisotropy

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Carrier cooling and exciton formation in GaSe;Physical Review B;1997-08-15

2. Optical and transport properties of B-doped GaSe semiconductor single crystal;Journal of Molecular Structure;1997-06

3. Properties of gallium selenide single crystal;Progress in Crystal Growth and Characterization of Materials;1994-01

4. Exciton-carrier scattering in gallium selenide;Physical Review B;1993-03-15

5. Red-shift of the excitonic level in two beam absorption spectra of GaSe;Physica Scripta;1988-10-01

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