Noise in microwave, injection, transit time and transferred-electron devices-Reference-Cited by-同舟云学术

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Noise in microwave, injection, transit time and transferred-electron devices

Published:1976-05 Issue:1 Volume:83 Page:24-40
ISSN:0378-4363
Container-title:Physica B+C
language:en
Short-container-title:Physica B+C

Author:

Constant E.

Publisher

Elsevier BV

Subject

General Engineering

Reference31 articles.

1. Noise properties of the injection-limited Gunn diode

2. T. Sebestgen, H. Hartnagel and L. Heron, Gallium Arsenide and Related Compounds, 1974 Conference Proceedings, p. 77.

3. Stabilisation mechanism for ‘supercritical’ transferred-electron amplifiers

4. On the mechanism for microwave amplification in ``supercritically'' doped n‐GaAs

5. A. Farrayre, B. Kramer and A. Mircea, Gallium Arsenid and Related Compounds, 1974 Conference Proceedings, p. 71.

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Flat doping profile double-drift silicon IMPATT for reliable CW high-power high-efficiency generation in the 94-GHz window;IEEE Transactions on Electron Devices;1990

2. A potentially low-noise avalanche diode microwave amplifier;IEEE Transactions on Electron Devices;1987-05

3. Semiconductor device development in the 1970's and 1980's—A perspective;Proceedings of the IEEE;1981

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