Hot electron transport in very short semiconductors
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference44 articles.
1. Electron dynamics in short channel field-effect transistors
2. Hot-carrier constraints on transient transport in very small semiconductor devices
3. On the physics and modeling of small semiconductor devices—I
4. On the physics and modeling of small semiconductor devices—II
5. Determination of transient regime of hot carriers in semiconductors, using the relaxation time approximations
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1. First-order intervalley scattering in low-dimensional systems;Physical Review B;2002-06-11
2. Subband structure and mobility of two-dimensional holes in strained Si/SiGe MOSFET’s;Physical Review B;1998-10-15
3. Transport in the surface channel of strained Si on a relaxed Si1−xGex substrate;Solid-State Electronics;1997-06
4. Der MOS-Transistor als Funktionselement. Grundlagen, Wirkprinzip und Kennlinienmodell;MOS-Feldeffekttransistoren;1994
5. Monte Carlo study of electron transport in silicon inversion layers;Physical Review B;1993-07-15
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