Pulsed laser annealing of semiconductors experimental facts and open questions-Reference-Cited by-同舟云学术

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Pulsed laser annealing of semiconductors experimental facts and open questions

Published:1983-03 Issue: Volume:117-118 Page:1010-1013
ISSN:0378-4363
Container-title:Physica B+C
language:en
Short-container-title:Physica B+C

Author:

Kurz H.,Liu J.M.,Bloembergen N.

Publisher

Elsevier BV

Subject

General Engineering

Reference25 articles.

1. Laser and Electron Beam Processing of Materials,1980

2. Laser and Electron Beam Solid Interactions and Material Processing,1981

3. Laser and Electron Beam Interactions with Solids,1982

4. A melting model for pulsing‐laser annealing of implanted semiconductors

5. Laser and Electron Beam Interactions with Solids;van Vechten,1982

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1. Pseudomorphic and relaxed SiGe/Si(001) layer synthesis by gas immersion laser doping (GILD);physica status solidi (c);2011-01-20

2. Cooling of Highly Photoexcited Electron–Hole Plasma in Polar Semiconductors and Semiconductor Quantum Wells: A Balance-Equation Approach;Hot Carriers in Semiconductor Nanostructures;1992

3. Theoretical Studies of the Transient Response of Highly Photoexcited Carriers in Semiconductors;Physics and Chemistry of Materials with Low-Dimensional Structures;1989

4. ELECTRONIC STRUCTURE OF SEMICONDUCTOR INTERFACES*;Le Journal de Physique Colloques;1984-04

5. MECHANISMS OF MELTING OF SILICON;Le Journal de Physique Colloques;1983-10

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