Scanning tunneling microscopy nanofabrication of electronic industry compatible thermal Si oxide
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference16 articles.
1. See, for example, T. Hori, Gate Dielectrics and MOS ULSIs, Springer Series in Electronics and Photonics, Vol. 34, Springer, Berlin, 1997, and references therein.
2. Direct nanometer scale patterning of SiO2with electron beam irradiation through a sacrificial layer
3. Nanostructure fabrication using the selective thermal desorption of SiO2 induced by electron beams
4. Modification of hydrogen‐passivated silicon by a scanning tunneling microscope operating in air
5. Nanoscale patterning and oxidation of H‐passivated Si(100)‐2×1 surfaces with an ultrahigh vacuum scanning tunneling microscope
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Nanolithography on SiO2/Si with a scanning tunnelling microscope;Nanotechnology;2003-09-24
2. Fabrication of Nanoscale Structures using STM and AFM;Advanced Semiconductor and Organic Nano-Techniques;2003
3. Electron Tunneling through SiO2/Si Structures in Scanning Tunneling Microscopy;Japanese Journal of Applied Physics;2001-08-15
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