Growth kinetics of three Mo-silicide layers formed by chemical vapor deposition of Si on Mo substrate-Reference-Cited by-同舟云学术

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Growth kinetics of three Mo-silicide layers formed by chemical vapor deposition of Si on Mo substrate

Published:2002-06 Issue:1 Volume:155 Page:85-95
ISSN:0257-8972
Container-title:Surface and Coatings Technology
language:en
Short-container-title:Surface and Coatings Technology

Author:

Yoon Jin-Kook,Byun Ji-Young,Kim Gyeung-Ho,Kim Jae-Soo,Choi Chong-Sool

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference31 articles.

1. Oxidation of High-Temperature Intermetallics;Packer,1988

2. Siliconizing of Molybdenum Metal in Indium-Silicon Melts

3. B. Cockeram, Ph.D. Thesis, Ohio State University, 1994.

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1. Oxidation behavior and interfacial microstructure evolution of MoSi2/MoB coatings on Mo1 substrate at 600 and 1400 °C;International Journal of Refractory Metals and Hard Materials;2023-06

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