Structural Size Effect with Altered Temperature on MgO-based Magnetic Tunnel Junction Device During Current Flow

Author:

Pomsanam Veeraporn,Warisarn Chanon,Siritaratiwat Apirat,Surawanitkun Chayada

Publisher

Elsevier BV

Subject

General Engineering

Reference5 articles.

1. Analysis of dielectric breakdown in CoFeB/MgO/CoFeB magnetic tunnel junction;Khan;Microelectron. Reliab.,2015

2. Enhanced tunneling magnetoresistance and perpendicular magnetic anisotropy in Mo/CoFeB/MgO magnetic tunnel junctions;Almasi;Appl. Phys. Lett.,2015

3. Developments in data storage, institute of electrical and electronics engineerings;Piramanayagam;Canada:,2012

4. Magnetic instability in tunneling magnetoresistive heads due to temperature increase during electrostatic discharge;Surawanitkun;IEEE Trans. Device Mater. Rel.,2012

5. Storage reliability and temperature increment with tilted free layer magnetization in nanopillars for spin torque magnetic memory;Surawanitkun;Chiang Mai J. Sci.,2015

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