A weak Galerkin finite element method for 1D semiconductor device simulation models-Reference-Cited by-同舟云学术

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A weak Galerkin finite element method for 1D semiconductor device simulation models

Published:2024-03 Issue: Volume:438 Page:115531
ISSN:0377-0427
Container-title:Journal of Computational and Applied Mathematics
language:en
Short-container-title:Journal of Computational and Applied Mathematics

Author:

Li Wenjuan,Liu Yunxian,Gao Fuzheng,Cui Jintao

Funder

Basic and Applied Basic Research Foundation of Guangdong Province

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Applied Mathematics,Computational Mathematics

Reference23 articles.

1. A WENO-solver for the transients of Boltzmann–Poisson system for semiconductor devices: performance and comparisons with Monte Carlo methods;Carrillo;J. Comput. Phys.,2003

2. Numerical methods for semiconductor device simulation;Bank;SIAM J. Sci. Stat. Comput.,1983

3. The finite volume Scharfetter–Gummel method for steady convection diffusion equations;Bank;Comput. Vis. Sci.,1998

4. Finite volume scheme for multi-dimensional drift-diffusion equations and convergence analysis;Chainais-Hillairet;ESAIM Math. Model. Numer. Anal.,2003

5. A finite volume scheme for convection-diffusion equations with nonlinear diffusion derived from the Scharfetter–Gummel scheme;Bessemoulin-Chatard;Numer. Math.,2012

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Interpolated coefficients stabilizer-free weak Galerkin method for semilinear parabolic convection–diffusion problem;Applied Mathematics Letters;2025-01

2. Optimal L2 error estimates of stabilizer-free weak Galerkin finite element method for the drift-diffusion problem;Journal of Computational and Applied Mathematics;2024-11

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