Investigating the impact of band gap engineering on optoelectronic properties of tetragonal MgZrN<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si216.svg" display="inline" id="d1e1696"><mml:msub><mml:mrow/><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:math> compound: A first principles study-Reference-Cited by-同舟云学术

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Investigating the impact of band gap engineering on optoelectronic properties of tetragonal MgZrN2 compound: A first principles study

Published:2024-09 Issue: Volume:337 Page:124812
ISSN:0022-4596
Container-title:Journal of Solid State Chemistry
language:en
Short-container-title:Journal of Solid State Chemistry

Author:

Arslan Muhammad Saqib^ORCID,Alqahtani A.,Zulfiqar Arslan^ORCID,Zulfiqar Muhammad^ORCID

Publisher

Elsevier BV

Reference61 articles.

1. A map of the inorganic ternary metal nitrides;Sun;Nat. Mater.,2019

2. Thermodynamic limit for synthesis of metastable inorganic materials;Aykol;Sci. Adv.,2018

3. Nitride-based semiconductors for blue and green light-emitting devices;Ponce;Nature,1997

4. Properties and microelectronic applications of thin films of refractory metal nitrides;Wittmer;J. Vac. Sci. Technol. A: Vac. Surf. Films,1985

5. Ternary nitride semiconductors in the rocksalt crystal structure;Bauers;Proc. Natl. Acad. Sci.,2019

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